Multiple-beam interference lithography with electron beam written gratings

Beam alignment and image metrology for scanning beam interference lithography: fabricating gratings with nanometer phase accuracy

We are developing a scanning beam interference lithography (SBIL) system. SBIL is capable of producing large-area linear diffraction gratings that are phase-accurate to the nanometer level. Such gratings may enable new paradigms in fields such as semiconductor pattern placement metrology and grating-based displacement measuring interferometry. With our prototype tool nicknamed “Nanoruler”, I ha...

Beam alignment for scanning beam interference lithography

By interfering two small diameter Gaussian laser beams, scanning beam interference lithography ~SBIL! is capable of patterning linear gratings and grids in resist while controlling their spatial phase distortions to the nanometer level. Our tool has a patterning area that is up to 300 mm in diameter. The motive for developing SBIL is to provide the semiconductor industry with a set of absolute ...

Three-beam interference lithography methodology.

Three-beam interference lithography represents a technology capable of producing two-dimensional periodic structures for applications such as micro- and nanoelectronics, photonic crystal devices, metamaterial devices, biomedical structures, and subwavelength optical elements. In the present work, a systematic methodology for implementing optimized three-beam interference lithography is presente...

Dopant Driven Electron Beam Lithography

Introduction to Electron Beam Lithography

Electron Beam Lithography is a specialized technique for creating extremely fine patterns (~ 50 nm). Derived from the early scanning electron microscopes, the technique in brief consists of scanning a beam of electrons across a surface covered with a resist film sensitive to those electrons, thus depositing energy in the desired pattern in the resist film. The main attributes of the technology ...